BSD816SNH6327

Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:1.4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:160mOhm @ 1.4A, 2.5V
• Vgs(th) (Max) @ Id:950mV @ 3.7µA

• Gate Charge (Qg) (Max) @ Vgs:600 pC @ 2.5 V
• Vgs (Max):±8V
• Input Capacitance (Ciss) (Max) @ Vds:180 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):500mW (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:PG-SOT363-6
• Package / Case:6-VSSOP, SC-88, SOT-363