NTA4151PT1

Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:760mA (Tj)
• Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
• Rds On (Max) @ Id, Vgs:360mOhm @ 350mA, 4.5V
• Vgs(th) (Max) @ Id:450mV @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:2.1 nC @ 4.5 V
• Vgs (Max):±6V
• Input Capacitance (Ciss) (Max) @ Vds:156 pF @ 5 V
• FET Feature:-
• Power Dissipation (Max):301mW (Tj)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:SC-75, SOT-416
• Package / Case:SC-75, SOT-416