5LN01M-TL-E

Rochester Electronics
In Stock: 87,129

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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Obsolete
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):50 V
  • Current - Continuous Drain (Id) @ 25°C:100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.5V, 4V
  • Rds On (Max) @ Id, Vgs:7.8Ohm @ 50mA, 4V
  • Vgs(th) (Max) @ Id:-

 

  • Gate Charge (Qg) (Max) @ Vgs:1.57 nC @ 10 V
  • Vgs (Max):±10V
  • Input Capacitance (Ciss) (Max) @ Vds:6.6 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):150mW (Ta)
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:3-MCP
  • Package / Case:SC-70, SOT-323

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