5HN01M-TL-E-SA

Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):50 V
• Current - Continuous Drain (Id) @ 25°C:100mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:7.5Ohm @ 50mA, 10V
• Vgs(th) (Max) @ Id:2.4V @ 100µA

• Gate Charge (Qg) (Max) @ Vgs:1.4 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:6.2 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):150mW (Ta)
• Operating Temperature:150°C
• Mounting Type:Surface Mount
• Supplier Device Package:MCP
• Package / Case:SC-70, SOT-323