SI2302DS,215

Technical Details

• Series:TrenchMOS™
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:2.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
• Rds On (Max) @ Id, Vgs:85mOhm @ 3.6A, 4.5V
• Vgs(th) (Max) @ Id:650mV @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:10 nC @ 4.5 V
• Vgs (Max):±8V
• Input Capacitance (Ciss) (Max) @ Vds:230 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):830mW (Tc)
• Operating Temperature:-65°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:TO-236AB (SOT23)
• Package / Case:TO-236-3, SC-59, SOT-23-3