5HN01M-TL-E

Rochester Electronics
In Stock: 15,175

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Pricing:
  • 1$0.09

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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Obsolete
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):50 V
  • Current - Continuous Drain (Id) @ 25°C:100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4V, 10V
  • Rds On (Max) @ Id, Vgs:7.5Ohm @ 50mA, 10V
  • Vgs(th) (Max) @ Id:-

 

  • Gate Charge (Qg) (Max) @ Vgs:1.4 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:6.2 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):150mW (Ta)
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:3-MCP
  • Package / Case:SC-70, SOT-323

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