NTD4806N-1G
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 30V 11.3A/79A IPAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet NTD4806N-1G Datasheet
-
ECAD Model
- Share
In Stock: 2,996
Can ship immediately
Pricing:
- 1$0.1
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Technical Details
- Series:-
- Package:Tube
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:11.3A (Ta), 79A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 11.5V
- Rds On (Max) @ Id, Vgs:6mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:23 nC @ 4.5 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:2.142 pF @ 12 V
- FET Feature:-
- Power Dissipation (Max):1.4W (Ta), 68W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:I-PAK
- Package / Case:TO-251-3 Stub Leads, IPak
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