SI2304DS,215

Technical Details

• Series:TrenchMOS™
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:1.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:117mOhm @ 500mA, 10V
• Vgs(th) (Max) @ Id:2V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:4.6 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:195 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):830mW (Tc)
• Operating Temperature:-65°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:TO-236AB
• Package / Case:TO-236-3, SC-59, SOT-23-3