IPU50R1K4CEAKMA1

Technical Details

• Series:CoolMOS™ CE
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):500 V
• Current - Continuous Drain (Id) @ 25°C:3.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):13V
• Rds On (Max) @ Id, Vgs:1.4Ohm @ 900mA, 13V
• Vgs(th) (Max) @ Id:3.5V @ 70µA

• Gate Charge (Qg) (Max) @ Vgs:8.2 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:178 pF @ 100 V
• FET Feature:-
• Power Dissipation (Max):42W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:PG-TO251-3
• Package / Case:TO-251-3 Short Leads, IPak, TO-251AA