NTHS2101PT1

Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):8 V
• Current - Continuous Drain (Id) @ 25°C:5.4A (Tj)
• Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
• Rds On (Max) @ Id, Vgs:25mOhm @ 5.4A, 4.5V
• Vgs(th) (Max) @ Id:1.5V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:30 nC @ 4.5 V
• Vgs (Max):±8V
• Input Capacitance (Ciss) (Max) @ Vds:2.4 pF @ 6.4 V
• FET Feature:-
• Power Dissipation (Max):1.3W (Ta)
• Operating Temperature:-
• Mounting Type:Surface Mount
• Supplier Device Package:ChipFET™
• Package / Case:8-SMD, Flat Lead