NTD4909N-1G

Technical Details

• Series:-
• Package:Tube
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:8.8A (Ta), 41A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:8mOhm @ 30A, 10V
• Vgs(th) (Max) @ Id:2.2V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:17.5 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:1.314 pF @ 15 V
• FET Feature:-
• Power Dissipation (Max):1.37W (Ta), 29.4W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:I-PAK
• Package / Case:TO-251-3 Short Leads, IPak, TO-251AA