SSR1N60BTM-WS
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 600V 900MA DPAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SSR1N60BTM-WS Datasheet
-
ECAD Model
- Share
In Stock: 2,545
Can ship immediately
Pricing:
- 1$0.18
- 2,500$0.18
Quote It
Technical Details
- Series:-
- Package:Bulk
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):600 V
- Current - Continuous Drain (Id) @ 25°C:900mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:12Ohm @ 450mA, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:7.7 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:215 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):2.5W (Ta), 28W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:D-Pak
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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