NTMSD2P102R2SG

Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:2.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:90mOhm @ 2.4A, 4.5V
• Vgs(th) (Max) @ Id:-

• Gate Charge (Qg) (Max) @ Vgs:18 nC @ 4.5 V
• Vgs (Max):-
• Input Capacitance (Ciss) (Max) @ Vds:750 pF @ 16 V
• FET Feature:Schottky Diode (Isolated)
• Power Dissipation (Max):-
• Operating Temperature:-
• Mounting Type:Surface Mount
• Supplier Device Package:8-SOIC
• Package / Case:8-SOIC (0.154", 3.90mm Width)