IRFHM8342TRPBF

Rochester Electronics
In Stock: 1,719

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Pricing:
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  • 4,000$0.19

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Technical Details

  • Series:HEXFET®
  • Package:Bulk
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:16mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id:2.35V @ 25µA

 

  • Gate Charge (Qg) (Max) @ Vgs:7.5 nC @ 4.5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:560 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):2.6W (Ta), 20W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-PQFN (3.3x3.3), Power33
  • Package / Case:8-PowerTDFN

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