IRFHM8342TRPBF
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionIRFHM8342 - 20V-30V N-CHANNEL
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRFHM8342TRPBF Datasheet
-
ECAD Model
- Share
In Stock: 1,719
Can ship immediately
Pricing:
- 1$0.19
- 4,000$0.19
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Technical Details
- Series:HEXFET®
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:16mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id:2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs:7.5 nC @ 4.5 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:560 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):2.6W (Ta), 20W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:8-PQFN (3.3x3.3), Power33
- Package / Case:8-PowerTDFN
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