MTDF2N06HDR2

Rochester Electronics
In Stock: 52,117

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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:220mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:26 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:200 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):1.25W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:Micro8™
  • Package / Case:8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

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