FQN1N50CBU

Technical Details

• Series:QFET®
• Package:Bulk
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):500 V
• Current - Continuous Drain (Id) @ 25°C:380mA (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:6Ohm @ 190mA, 10V
• Vgs(th) (Max) @ Id:4V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:6.4 nC @ 10 V
• Vgs (Max):±30V
• Input Capacitance (Ciss) (Max) @ Vds:195 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):890mW (Ta), 2.08W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-92-3
• Package / Case:TO-226-3, TO-92-3 (TO-226AA)