NVD5867NLT4G

Technical Details

• Series:Automotive, AEC-Q101
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):60 V
• Current - Continuous Drain (Id) @ 25°C:6A (Ta), 22A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:39mOhm @ 11A, 10V
• Vgs(th) (Max) @ Id:2.5V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:675 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):3.3W (Ta), 43W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:DPAK (SINGLE GAUGE)
• Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63