IPU80R2K8CEBKMA1
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 800V 1.9A TO251-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPU80R2K8CEBKMA1 Datasheet
-
ECAD Model
- Share
In Stock: 151
Can ship immediately
Pricing:
- 1$0.23
- 10$0.20344
- 100$0.1586
- 500$0.1277
- 1,000$0.10437
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Technical Details
- Series:CoolMOS™
- Package:Tube
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):800 V
- Current - Continuous Drain (Id) @ 25°C:1.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:2.8Ohm @ 1.1A, 10V
- Vgs(th) (Max) @ Id:3.9V @ 120µA
- Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:290 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):42W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:PG-TO251-3
- Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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