PSMN3R2-30YLC,115
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionELEMENT, NCHANNEL, SILICON, MOSF
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet PSMN3R2-30YLC,115 Datasheet
-
ECAD Model
- Share
In Stock: 1,418
Can ship immediately
Pricing:
- 1$0.24
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:3.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:1.95V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:29.5 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:2.081 pF @ 15 V
- FET Feature:-
- Power Dissipation (Max):92W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:LFPAK56, Power-SO8
- Package / Case:SC-100, SOT-669
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