PHT11N06LT,135

Technical Details

• Series:TrenchMOS™
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):55 V
• Current - Continuous Drain (Id) @ 25°C:4.9A (Ta), 10.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:40mOhm @ 5A, 5V
• Vgs(th) (Max) @ Id:2V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:17 nC @ 5 V
• Vgs (Max):±13V
• Input Capacitance (Ciss) (Max) @ Vds:1400 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):1.8W (Ta), 8.3W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:SC-73
• Package / Case:TO-261-4, TO-261AA