PSMN050-80BS,118
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionPOWER FIELD-EFFECT TRANSISTOR, 2
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet PSMN050-80BS,118 Datasheet
-
ECAD Model
- Share
In Stock: 3,345
Can ship immediately
Pricing:
- 1$0.28
- 800$0.28
- 1,600$0.25599
- 2,400$0.23199
- 5,600$0.216
- 20,000$0.208
Quote It
Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):80 V
- Current - Continuous Drain (Id) @ 25°C:22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:46mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:633 pF @ 12 V
- FET Feature:-
- Power Dissipation (Max):56W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:D2PAK
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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