PSMN050-80BS,118

Rochester Electronics
In Stock: 3,345

Can ship immediately

Pricing:
  • 1$0.28
  • 800$0.28
  • 1,600$0.25599
  • 2,400$0.23199
  • 5,600$0.216
  • 20,000$0.208

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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):80 V
  • Current - Continuous Drain (Id) @ 25°C:22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:46mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:4V @ 1mA

 

  • Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:633 pF @ 12 V
  • FET Feature:-
  • Power Dissipation (Max):56W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:D2PAK
  • Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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