IRLR8729PBF

Rochester Electronics
In Stock: 1,150

Can ship immediately

Pricing:
  • 1$0.28
  • 10$0.24755
  • 100$0.19301
  • 500$0.15539

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Technical Details

  • Series:HEXFET®
  • Package:Bulk
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:8.9mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id:2.35V @ 25µA

 

  • Gate Charge (Qg) (Max) @ Vgs:16 nC @ 4.5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1350 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):55W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:D-PAK (TO-252AA)
  • Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63

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