ECH8419-TL-H

Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):35 V
• Current - Continuous Drain (Id) @ 25°C:9A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):4V, 10V
• Rds On (Max) @ Id, Vgs:17mOhm @ 5A, 10V
• Vgs(th) (Max) @ Id:2.6V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:960 pF @ 20 V
• FET Feature:-
• Power Dissipation (Max):1.5W (Ta)
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:8-ECH
• Package / Case:8-SMD, Flat Lead