FDZ3N513ZT

Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:1.1A
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:462mOhm @ 300mA, 4.5V
• Vgs(th) (Max) @ Id:1.5V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:1 nC @ 4.5 V
• Vgs (Max):+5.5V, -300mV
• Input Capacitance (Ciss) (Max) @ Vds:85 pF @ 15 V
• FET Feature:Schottky Diode (Isolated)
• Power Dissipation (Max):1W (Ta)
• Operating Temperature:-55°C ~ 125°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:4-WLCSP (1x1)
• Package / Case:4-XFBGA, WLCSP