NTDV5805NT4G

Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):40 V
• Current - Continuous Drain (Id) @ 25°C:51A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):5V, 10V
• Rds On (Max) @ Id, Vgs:9.5mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id:3.5V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:1.725 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):-
• Operating Temperature:-
• Mounting Type:Surface Mount
• Supplier Device Package:DPAK
• Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63