PSMN1R9-25YLC,115

Rochester Electronics
In Stock: 7,527

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Pricing:
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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Obsolete
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):25 V
  • Current - Continuous Drain (Id) @ 25°C:100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:2.05mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id:1.95V @ 1mA

 

  • Gate Charge (Qg) (Max) @ Vgs:57 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:3.504 pF @ 12 V
  • FET Feature:-
  • Power Dissipation (Max):141W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:LFPAK56, Power-SO8
  • Package / Case:SC-100, SOT-669

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