SPD04P10PGBTMA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 100V 4A TO252-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SPD04P10PGBTMA1 Datasheet
-
ECAD Model
- Share
In Stock: 7,653
Can ship immediately
Pricing:
- 1$0.85
- 2,500$0.34412
Quote It
Technical Details
- Series:SIPMOS®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:1Ohm @ 2.8A, 10V
- Vgs(th) (Max) @ Id:4V @ 380µA
- Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:319 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):38W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-TO252-3
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
MOSFET N-CH 30V 22A/25A PPAK
- 1: $0.90000
MOSFET N-CH 40V 74A PPAK SO-8
- 1: $0.90000
MOSFET N-CH 30V 14A/44A 8VSON
- 1: $0.90000
- 2500: $0.32700
- 5000: $0.31572
N-CHANNEL POWER MOSFET
- 1: $0.35000
80A, 30V, N-CHANNEL, MOSFET
- 1: $0.35000
P-CHANNEL MOSFET
- 1: $0.35000