IRLR6225PBF

Rochester Electronics
In Stock: 1,886

Can ship immediately

Pricing:
  • 1$0.35
  • 3,000$0.35

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Technical Details

  • Series:HEXFET®
  • Package:Bulk
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:4mOhm @ 21A, 4.5V
  • Vgs(th) (Max) @ Id:1.1V @ 50µA

 

  • Gate Charge (Qg) (Max) @ Vgs:72 nC @ 4.5 V
  • Vgs (Max):±12V
  • Input Capacitance (Ciss) (Max) @ Vds:3770 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):63W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:D-PAK (TO-252AA)
  • Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63

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