NDD04N60Z-1G
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionPOWER MOSFET 600V
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet NDD04N60Z-1G Datasheet
-
ECAD Model
- Share
In Stock: 1,281
Can ship immediately
Pricing:
- 1$0.36
- 1,425$0.36
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Technical Details
- Series:-
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):600 V
- Current - Continuous Drain (Id) @ 25°C:4.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:2Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id:4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:640 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):83W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:I-PAK
- Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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