NVMFS5C442NLT1G

Rochester Electronics
In Stock: 55,183

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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:28A (Ta), 130A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:2.5mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id:2V @ 90µA

 

  • Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:3100 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):3.7W (Ta), 83W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:5-DFN (5x6) (8-SOFL)
  • Package / Case:8-PowerTDFN, 5 Leads

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