In Stock: 296,790

Can ship immediately

Pricing:
  • 1$0.41

Quote It

Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Obsolete
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:10.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):2.7V, 4.5V
  • Rds On (Max) @ Id, Vgs:13.5mOhm @ 10.5A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:60 nC @ 4.5 V
  • Vgs (Max):±8V
  • Input Capacitance (Ciss) (Max) @ Vds:2.15 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):2.5W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-SOIC
  • Package / Case:8-SOIC (0.154", 3.90mm Width)

Related Products


RJK0374DSP-01#J0

POWER TRANSISTOR, MOSFET

  • 1: $0.41000

2SJ557-T1B-A

SMALL SIGNAL P-CHANNEL MOSFET

  • 1: $0.41000

NTD4N60

N-CHANNEL POWER MOSFET

  • 1: $0.41000

FQD5N40TM

MOSFET N-CH 400V 3.4A DPAK

FQD5N40TM Datasheet
  • 1: $0.41000

UPA2807T1L-E1-AT

N-CHANNEL POWER MOSFET

  • 1: $0.41000

NTMFS4120NT1G

MOSFET N-CH 30V 11A 5DFN

NTMFS4120NT1G Datasheet
  • 1: $0.41000

FDD6778A

MOSFET N-CH 25V 12A/10A DPAK

FDD6778A Datasheet
  • 1: $0.41000

3LN03SS-TL-E

N-CHANNEL SILICON MOSFET

  • 1: $0.41000

FDG361N

MOSFET N-CH 100V 600MA SC88

FDG361N Datasheet
  • 1: $0.41000

FDFC3N108

MOSFET N-CH 20V 3A SUPERSOT6

FDFC3N108 Datasheet
  • 1: $0.41000

Top