IPD60R750E6BTMA1

Technical Details

• Series:CoolMOS™ E6
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):600 V
• Current - Continuous Drain (Id) @ 25°C:5.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:750mOhm @ 2A, 10V
• Vgs(th) (Max) @ Id:3.5V @ 170µA

• Gate Charge (Qg) (Max) @ Vgs:17.2 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:373 pF @ 100 V
• FET Feature:-
• Power Dissipation (Max):48W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:PG-TO252-3-313
• Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63