CSD25401Q3

Technical Details

• Series:NexFET™
• Package:Bulk
• Part Status:Obsolete
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:14A (Ta), 60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
• Rds On (Max) @ Id, Vgs:11.7mOhm @ 10A, 4.5V
• Vgs(th) (Max) @ Id:1.2V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:12.3 nC @ 4.5 V
• Vgs (Max):±12V
• Input Capacitance (Ciss) (Max) @ Vds:1.4 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):2.8W (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:8-VSON-CLIP (3.3x3.3)
• Package / Case:8-PowerTDFN