IRL3103PBF
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionHEXFET POWER MOSFET
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRL3103PBF Datasheet
-
ECAD Model
- Share
In Stock: 3,309
Can ship immediately
Pricing:
- 1$0.46
- 10$0.40796
- 100$0.3224
- 500$0.25003
- 1,000$0.1974
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Technical Details
- Series:HEXFET®
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:12mOhm @ 34A, 10V
- Vgs(th) (Max) @ Id:1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:33 nC @ 4.5 V
- Vgs (Max):±16V
- Input Capacitance (Ciss) (Max) @ Vds:1.65 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):94W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-220AB
- Package / Case:TO-220-3
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