STD110N02RT4G

Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):24 V
• Current - Continuous Drain (Id) @ 25°C:32A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:4.6mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id:2V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:28 nC @ 4.5 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:3.44 pF @ 20 V
• FET Feature:-
• Power Dissipation (Max):1.5W (Ta), 110W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:DPAK
• Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63