CSD16322Q5C

Rochester Electronics
In Stock: 10,187

Can ship immediately

Pricing:
  • 1$0.5
  • 2,500$0.5

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Technical Details

  • Series:NexFET™
  • Package:Bulk
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):25 V
  • Current - Continuous Drain (Id) @ 25°C:21A (Ta), 97A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:5mOhm @ 20A, 8V
  • Vgs(th) (Max) @ Id:1.4V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:9.7 nC @ 4.5 V
  • Vgs (Max):+10V, -8V
  • Input Capacitance (Ciss) (Max) @ Vds:1365 pF @ 12.5 V
  • FET Feature:-
  • Power Dissipation (Max):3.1W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-VSON-CLIP (5x6)
  • Package / Case:8-PowerTDFN

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