IPD60R600E6ATMA1

Technical Details

• Series:CoolMOS™ E6
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):600 V
• Current - Continuous Drain (Id) @ 25°C:7.3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:600mOhm @ 2.4A, 10V
• Vgs(th) (Max) @ Id:3.5V @ 200µA

• Gate Charge (Qg) (Max) @ Vgs:20.5 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:440 pF @ 100 V
• FET Feature:-
• Power Dissipation (Max):63W (Tc)
• Operating Temperature:-
• Mounting Type:Surface Mount
• Supplier Device Package:TO-252
• Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63