NTMS10P02R2
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 20V 8.8A 8SOIC
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet NTMS10P02R2 Datasheet
-
ECAD Model
- Share
In Stock: 1,496
Can ship immediately
Pricing:
- 1$0.53
- 2,500$0.53
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Obsolete
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):20 V
- Current - Continuous Drain (Id) @ 25°C:8.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:14mOhm @ 10A, 4.5V
- Vgs(th) (Max) @ Id:1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:70 nC @ 4.5 V
- Vgs (Max):±12V
- Input Capacitance (Ciss) (Max) @ Vds:3.64 pF @ 16 V
- FET Feature:-
- Power Dissipation (Max):1.6W (Ta)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:8-SOIC
- Package / Case:8-SOIC (0.154", 3.90mm Width)
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