SPP15P10PHXKSA1

Technical Details

• Series:Automotive, AEC-Q101, SIPMOS®
• Package:Bulk
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):100 V
• Current - Continuous Drain (Id) @ 25°C:15A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:240mOhm @ 10.6A, 10V
• Vgs(th) (Max) @ Id:2.1V @ 1.54mA

• Gate Charge (Qg) (Max) @ Vgs:48 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:1280 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):128W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:PG-TO220-3-1
• Package / Case:TO-220-3