PSMN013-100ES,127
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionPOWER FIELD-EFFECT TRANSISTOR, 6
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet PSMN013-100ES,127 Datasheet
-
ECAD Model
- Share
In Stock: 4,104
Can ship immediately
Pricing:
- 1$0.58
- 10$0.52233
- 100$0.41981
- 500$0.32651
- 1,000$0.27054
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Technical Details
- Series:-
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:68A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:13.9mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:59 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:3.195 pF @ 50 V
- FET Feature:-
- Power Dissipation (Max):170W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:I2PAK
- Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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