NDD60N900U1T4G
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 600V 5.7A DPAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet NDD60N900U1T4G Datasheet
-
ECAD Model
- Share
In Stock: 2,552
Can ship immediately
Pricing:
- 1$0.59
- 2,500$0.56102
Quote It
Technical Details
- Series:-
- Package:Bulk
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):600 V
- Current - Continuous Drain (Id) @ 25°C:5.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:900mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
- Vgs (Max):±25V
- Input Capacitance (Ciss) (Max) @ Vds:360 pF @ 50 V
- FET Feature:-
- Power Dissipation (Max):74W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:DPAK
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
N-CHANNEL POWER MOSFET
- 1: $0.59000
SMALL SIGNAL N-CHANNEL MOSFET
- 1: $0.59000
IAUC100N04S6N022ATMA1
- 1: $1.24000
MOSFET N-CH 80V 15.9A/54.7A PPAK
- 1: $1.40000
MOSFET N-CH 700V 8.5A TO252
- 1: $1.41000
