In Stock: 15,407

Can ship immediately

Pricing:
  • 1$0.61

Quote It

Technical Details

  • Series:PowerTrench®
  • Package:Bulk
  • Part Status:Obsolete
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):25 V
  • Current - Continuous Drain (Id) @ 25°C:20A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:5.7mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:41 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2.315 pF @ 13 V
  • FET Feature:-
  • Power Dissipation (Max):3.7W (Ta), 42W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:D-PAK (TO-252)
  • Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63

Related Products


IPD60R600CP

N-CHANNEL POWER MOSFET

  • 1: $0.61000

IPI70N10S3L12AKSA1

MOSFET N-CH 100V 70A TO262-3

IPI70N10S3L12AKSA1 Datasheet
  • 1: $0.61000
  • 500: $0.61000

CSD16408Q5C

MOSFET N-CH 25V 22A/113A 8VSON

  • 1: $0.61000
  • 2500: $0.61000

FQB4N20TM

MOSFET N-CH 200V 3.6A D2PAK

FQB4N20TM Datasheet
  • 1: $0.61000

FQI5N50CTU

MOSFET N-CH 500V 5A I2PAK

FQI5N50CTU Datasheet
  • 1: $0.61000

FQD630TM

MOSFET N-CH 200V 7A DPAK

FQD630TM Datasheet
  • 1: $0.61000

IPD60R450E6ATMA1

MOSFET N-CH 600V 9.2A TO252-3

IPD60R450E6ATMA1 Datasheet
  • 1: $0.61000
  • 2500: $0.61000

BSC014N03MSGATMA1

PFET, 30A I(D), 30V, 0.00175OHM,

BSC014N03MSGATMA1 Datasheet
  • 1: $0.61000
  • 5000: $0.61000

FDD068AN03L

MOSFET N-CH 30V 17A/35A TO252AA

FDD068AN03L Datasheet
  • 1: $0.61000

FDW2502PZ

P-CHANNEL MOSFET

  • 1: $0.61000

Top