IPP60R520E6XKSA1
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 600V 8.1A TO220-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPP60R520E6XKSA1 Datasheet
-
ECAD Model
- Share
In Stock: 1,796
Can ship immediately
Pricing:
- 1$0.64
- 500$0.64
Quote It
Technical Details
- Series:CoolMOS™
- Package:Tube
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):600 V
- Current - Continuous Drain (Id) @ 25°C:8.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:520mOhm @ 2.8A, 10V
- Vgs(th) (Max) @ Id:3.5V @ 230µA
- Gate Charge (Qg) (Max) @ Vgs:23.4 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:512 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):66W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:PG-TO220-3
- Package / Case:TO-220-3
Related Products
N-CHANNEL POWER MOSFET
- 1: $0.64000
N-CHANNEL POWER MOSFET
- 1: $0.64000
N-CHANNEL POWER MOSFET
- 1: $0.64000
MOSFET N-CH 100V 33A DPAK
- 1: $1.52000
MOSFET N-CH 60V 15.8A/39.3A PPAK
- 1: $1.53000
