TPN1110ENH,L1Q
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 200V 7.2A 8TSON
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TPN1110ENH,L1Q Datasheet
-
ECAD Model
- Share
In Stock: 4,388
Can ship immediately
Pricing:
- 1$1.6
- 5,000$0.63876
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Technical Details
- Series:U-MOSVIII-H
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):200 V
- Current - Continuous Drain (Id) @ 25°C:7.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:114mOhm @ 3.6A, 10V
- Vgs(th) (Max) @ Id:4V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs:7 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:600 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):700mW (Ta), 39W (Tc)
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:8-TSON Advance (3.3x3.3)
- Package / Case:8-PowerVDFN
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