IRFB23N15DPBF

Rochester Electronics
In Stock: 147

Can ship immediately

Pricing:
  • 1$0.67
  • 10$0.60489
  • 100$0.48603
  • 500$0.37804
  • 1,000$0.31323

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Technical Details

  • Series:HEXFET®
  • Package:Bulk
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):150 V
  • Current - Continuous Drain (Id) @ 25°C:23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:90mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id:5.5V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:56 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:1.2 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):3.8W (Ta), 136W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220AB
  • Package / Case:TO-220-3

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