IPA180N10N3GXKSA1
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- Description28A, 100V, 0.018OHM, N-CHANNEL,
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPA180N10N3GXKSA1 Datasheet
-
ECAD Model
- Share
In Stock: 1,951
Can ship immediately
Pricing:
- 1$0.69
- 500$0.69
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Technical Details
- Series:OptiMOS™
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):6V, 10V
- Rds On (Max) @ Id, Vgs:18mOhm @ 28A, 10V
- Vgs(th) (Max) @ Id:3.5V @ 35µA
- Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:1.8 pF @ 50 V
- FET Feature:-
- Power Dissipation (Max):30W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:PG-TO220-FP
- Package / Case:TO-220-3 Full Pack
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