IPP80N06S2L06AKSA1
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 55V 80A TO220-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPP80N06S2L06AKSA1 Datasheet
-
ECAD Model
- Share
In Stock: 19,100
Can ship immediately
Pricing:
- 1$0.71
Quote It
Technical Details
- Series:OptiMOS™
- Package:Tube
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):55 V
- Current - Continuous Drain (Id) @ 25°C:80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:6.3mOhm @ 69A, 10V
- Vgs(th) (Max) @ Id:2V @ 180µA
- Gate Charge (Qg) (Max) @ Vgs:150 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:3.8 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):250W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:PG-TO220-3-1
- Package / Case:TO-220-3
Related Products
MOSFET N-CH 150V 37A TO220-3
- 1: $0.71000
MOSFET N-CH 30V 10A 8VSOF
- 1: $0.71000
POWER TRANSISTOR, MOSFET
- 1: $0.71000
MOSFET N-CH 30V 10A 8VSOF
- 1: $0.71000
