IRF6892STRPBF
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- Description25V 999A DIRECTFET-LV
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRF6892STRPBF Datasheet
-
ECAD Model
- Share
In Stock: 3,892
Can ship immediately
Pricing:
- 1$0.71
- 4,800$0.71
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Technical Details
- Series:HEXFET®
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):25 V
- Current - Continuous Drain (Id) @ 25°C:28A (Ta), 125A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:1.7mOhm @ 28A, 10V
- Vgs(th) (Max) @ Id:2.1V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs:25 nC @ 4.5 V
- Vgs (Max):±16V
- Input Capacitance (Ciss) (Max) @ Vds:2.51 pF @ 13 V
- FET Feature:-
- Power Dissipation (Max):2.1W (Ta), 42W (Tc)
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:DIRECTFET™ S3C
- Package / Case:DirectFET™ Isometric S3C
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