IPP085N06LGAKSA1

Technical Details

• Series:OptiMOS™
• Package:Tube
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):60 V
• Current - Continuous Drain (Id) @ 25°C:80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:8.5mOhm @ 80A. 10V
• Vgs(th) (Max) @ Id:2V @ 125µA

• Gate Charge (Qg) (Max) @ Vgs:104 nC @ 10 V
• Vgs (Max):-
• Input Capacitance (Ciss) (Max) @ Vds:3.5 pF @ 30 V
• FET Feature:-
• Power Dissipation (Max):-
• Operating Temperature:-
• Mounting Type:Through Hole
• Supplier Device Package:PG-TO220-3-1
• Package / Case:TO-220-3