IRF6810STRPBF

Rochester Electronics
In Stock: 4,932

Can ship immediately

Pricing:
  • 1$0.73
  • 4,800$0.73
  • 9,600$0.71469

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Technical Details

  • Series:HEXFET®
  • Package:Bulk
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):25 V
  • Current - Continuous Drain (Id) @ 25°C:16A (Ta), 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:5.2mOhm @ 16A, 10V
  • Vgs(th) (Max) @ Id:2.1V @ 25µA

 

  • Gate Charge (Qg) (Max) @ Vgs:11 nC @ 4.5 V
  • Vgs (Max):±16V
  • Input Capacitance (Ciss) (Max) @ Vds:1.038 pF @ 13 V
  • FET Feature:-
  • Power Dissipation (Max):2.1W (Ta), 20W (Tc)
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:DIRECTFET S1
  • Package / Case:DirectFET™ Isometric S1

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